Germanium wrap-around photodetectors on Silicon photonics
نویسندگان
چکیده
منابع مشابه
Germanium-on-Silicon for Integrated Silicon Photonics
To meet the unprecedented demands for data transmission speed and bandwidth silicon integrated photonics that can generate, modulate, process and detect light signals is being developed. Integrated silicon photonics that can be built using existing CMOS fabrication facilities offers the tantalizing prospect of a scalable and cost-efficient solution to replace electrical interconnects. Silicon, ...
متن کاملSilicon-based silicon-germanium-tin heterostructure photonics.
The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifi...
متن کاملUltra-low capacitance and high speed germanium photodetectors on silicon.
We demonstrate waveguide integrated germanium detectors with capacitance as small as 2.4 fF and directly recorded impulse response as fast as 8.8 ps. Based on such detectors and cascaded silicon microring resonators we also demonstrate a highly scalable wavelength division demultiplexing system that can potentially provide tera-bit/s (Tbps) bandwidth over a small area.
متن کاملGermanium Quantum Wells for High-Performance Modulators in Silicon Photonics
Silicon electronics dominates information processing, and offers a remarkable technology for making very complex systems for very little cost. Many of the waveguide passive optical components that we use today in telecommunications, such as wavelength splitters, use the same technology base – the silicon, silicon dioxide and silicon nitride that are the semiconductors and insulators of electron...
متن کاملSilicon-Germanium multi-quantum well photodetectors in the near infrared.
Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa str...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Optics Express
سال: 2015
ISSN: 1094-4087
DOI: 10.1364/oe.23.011975